bdx53/a/b/c npn epitaxial silicon transistor power darlington tr hammer drivers,audio amplifiers application power linear and switching applications ? ?? ? complementary to bdx54/54a/54b/54c respectively to-220 absolute maximum ratings (t a =25 c cc c ) characteristic symbol rating unit collector-base voltage :bdx53 :bdx53a :bdx53b :BDX53C collector-emittervoltage :bdx53 :bdx53a :bdx53b :BDX53C emitter-base voltage collector current (dc) collector current (pulse) base current (dc) collector dissipation (tc=25 c) junction temperature storage temperature vcbo vceo vebo ic ic ib pc tj tstg 45 60 80 100 45 60 80 100 5 8 12 0.2 60 150 -50~150 v v v v v v v v v a a a w c c electrical characteristics (ta=25 c cc c ) wing shing computer components co., (h.k.)ltd. tel:(852)2341 9276 fax:(852)2797 8153 homepage: http://www.wingshing.com e-mail: wsccltd@hkstar.com
characterristic symbol test condition min typ max unit collector emitter sustaining voltage :bdx53 :bdx53a :bdx53b :BDX53C collector cutoff current :bdx53 :bdx53a :bdx53b :BDX53C collector cutoff current :bdx53 :bdx53a :bdx53b :BDX53C emitter cutoff current dc current gain collector- emitter saturation voltage base- emitter saturation voltage parallel diode forward voltage v ceo(sus) i cbo i ceo i ebo h fe v ce(sat) v be(sat) v f i c =100ma, i b =0 v cb = 45v , i e =0 v cb = 60v , i e =0 v cb = 80v , i e =0 v cb = 100v , i e =0 v ce = 22v , i c =0 v ce = 30v , i c =0 v ce = 40v , i c =0 v ce = 50v , i c =0 v eb = 5v , i c = 0 v ce = 3v , i c =3a i c =3a , i b =12ma i c =3a , i b =12ma i f =3a i f =8a 45 60 80 100 750 1.8 2.5 200 200 200 200 500 500 500 500 2 2 2.5 2.5 v v v v a a a a a a a a ma v v v v v
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